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NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5027H APPLICATIONS High Voltage And High Reliability . ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-3P T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation Tc=25ae----------(c) 65W VCBO Collector-Base Voltage-----------1100V VCEO Collector-Emitter Voltage----------800V VEBO Emitter-Base Voltage---- -- ------7V ICCollector Current DC(c)--------------3A ICP Collector Current Pulse------------- (c) 10A Ib Current--------------Base --1.5A 1D Base B 2D Collector C 3D Emitter E ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol BVCBO BVCEO BVEBO ICBO IEBO Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current 10 8 2 1.5 15 60 V V Min 1100 800 7 10 10 40 Typ Max Unit V V V Test Conditions IC=1mA, IC=5mA, I =0 E I =0 B IE=1mA =0 IC |I VCB=800V, IE=0 A |I VEB=5V, IC=0 A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1.5A, IB =0.3A IC=1.5A, IB =0.3A HFE 1(c) DC Current Gain HFE 2(c) DC Current Gain VCE(sat) VBE(sat) fT Cob Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance MHz VCE=10V,IC=0.2A pF VCB=10V, IE=0 f=1MHz hFE Classification N 1 0 20 R 15 30 20 O 40 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5027H NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5027H |
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